D965 Datasheet & Equivalents
NPN
SOT-23
High Power
HT(Shenzhen Jinyu Semicon)
VCEO
22V
Ic Max
5A
Pd Max
350mW
hFE Gain
600
Quick Reference
The D965 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a breakdown voltage of 22V and continuous collector current of 5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 22V | Max breakdown voltage |
| Collector Current (Ic) | 5A | Max current handling |
| Power Dissipation (Pd) | 350mW | Max thermal limit |
| DC Current Gain (hFE) | 600 | Base signal amplification ratio |
| Transition Frequency (fT) | 150MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZXTN2031FTA | NPN | SOT-23 | 50V | 5A | 200 | 1.2W | DIODES 📄 PDF |