D882S Datasheet & Equivalents
NPN
SOT-23
General Purpose
Shikues
VCEO
30V
Ic Max
3A
Pd Max
1W
hFE Gain
30
Quick Reference
The D882S is a NPN bipolar junction transistor in a SOT-23 package, manufactured by Shikues. It supports a breakdown voltage of 30V and continuous collector current of 3A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Shikues | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 30V | Max breakdown voltage |
| Collector Current (Ic) | 3A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | 30 | Base signal amplification ratio |
| Transition Frequency (fT) | 90MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 500mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 1uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| D882SSG-P-AE3-R | NPN | SOT-23 | 30V | 3A | 160 | 10W | UTC 📄 PDF |
| ZXTN25040DFHTA | NPN | SOT-23 | 40V | 4A | 300 | 1.25W | DIODES 📄 PDF |
| ZXTN25050DFHTA | NPN | SOT-23 | 50V | 4A | 300 | 1.25W | DIODES 📄 PDF |
| ZXTN2031FTA | NPN | SOT-23 | 50V | 5A | 200 | 1.2W | DIODES 📄 PDF |
| ZXTN2018FQTA | NPN | SOT-23 | 60V | 5A | 100 | 1W | DIODES 📄 PDF |
| ZXTN2018FTA | NPN | SOT-23 | 60V | 5A | 100 | 1.56W | DIODES 📄 PDF |