UMX1N Transistor Datasheet & Specifications

NPN BJT | YANGJIE

NPNSOT-363General Purpose
VCEO
50V
Ic Max
150mA
Pd Max
200mW
Gain
120
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Quick Reference

The UMX1N is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the UMX1N datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO50VBreakdown voltage
IC Max150mACollector current
Pd Max200mWPower dissipation
Gain120DC current gain
Frequency180MHzTransition speed
VCEsat400mVSaturation voltage
Vebo7VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
DSS4240Y-7NPNSOT-36340V2A625mW
BC847BDW1T1G-GKNPNSOT-36345V100mA200mW
MMDT2222ANPNSOT-36340V600mA200mW
HMMDT39047FNPNSOT-36340V200mA200mW
BC847BDW1T1G-FSNPNSOT-36345V100mA200mW
BCM847BSNPNSOT-36345V100mA200mW
BC846BSNPNSOT-36365V100mA200mW
BC847BSQNPNSOT-36345V100mA200mW
TPMMDT4401NPNSOT-36340V600mA200mW
TPBC847SNPNSOT-36345V100mA300mW
View all SOT-363 NPN Transistors ›