TPBC847S Transistor Datasheet & Specifications

NPN BJT | TECH PUBLIC

NPNSOT-363General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
300mW
Gain
200

Quick Reference

The TPBC847S is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the TPBC847S datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO45VBreakdown voltage
IC Max100mACollector current
Pd Max300mWPower dissipation
Gain200DC current gain
Frequency100MHzTransition speed
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
DSS4240Y-7NPNSOT-36340V2A625mW
BC847BDW1T1G-GKNPNSOT-36345V100mA200mW
MMDT2222ANPNSOT-36340V600mA200mW
HMMDT39047FNPNSOT-36340V200mA200mW
BC847BDW1T1G-FSNPNSOT-36345V100mA200mW
BCM847BSNPNSOT-36345V100mA200mW
BC847BSQNPNSOT-36345V100mA200mW
TPMMDT4401NPNSOT-36340V600mA200mW
MMDT3904NPNSOT-363-40V200mA
BC847SNPNSOT-36345V100mA200mW