HMMDT39047F Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-363General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
200mW
Gain
70
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Quick Reference

The HMMDT39047F is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the HMMDT39047F datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain70DC current gain
Frequency300MHzTransition speed
VCEsat300mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
DSS4240Y-7NPNSOT-36340V2A625mW
BC847BDW1T1G-GKNPNSOT-36345V100mA200mW
MMDT2222ANPNSOT-36340V600mA200mW
BC847BDW1T1G-FSNPNSOT-36345V100mA200mW
BCM847BSNPNSOT-36345V100mA200mW
BC847BSQNPNSOT-36345V100mA200mW
TPMMDT4401NPNSOT-36340V600mA200mW
TPBC847SNPNSOT-36345V100mA300mW
TPBC848SNPNSOT-36330V100mA300mW
MMDT3904NPNSOT-363-40V200mA
View all SOT-363 NPN Transistors ›