TPBC848S Transistor Datasheet & Specifications
NPNSOT-363General Purpose
VCEO
30V
Ic Max
100mA
Pd Max
300mW
Gain
200
Quick Reference
The TPBC848S is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 30V breakdown voltage and 100mA continuous collector current. Download the TPBC848S datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| VCEO | 30V | Breakdown voltage |
| IC Max | 100mA | Collector current |
| Pd Max | 300mW | Power dissipation |
| Gain | 200 | DC current gain |
| Frequency | 100MHz | Transition speed |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|