BC847BDW1T1G-FS Transistor Datasheet & Specifications

NPN BJT | FUXINSEMI

NPNSOT-363General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
200mW
Gain
200
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Quick Reference

The BC847BDW1T1G-FS is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847BDW1T1G-FS datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFUXINSEMIOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO45VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain200DC current gain
Frequency200MHzTransition speed
VCEsat650mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
DSS4240Y-7NPNSOT-36340V2A625mW
BC847BDW1T1G-GKNPNSOT-36345V100mA200mW
MMDT2222ANPNSOT-36340V600mA200mW
HMMDT39047FNPNSOT-36340V200mA200mW
BCM847BSNPNSOT-36345V100mA200mW
BC847BSQNPNSOT-36345V100mA200mW
TPMMDT4401NPNSOT-36340V600mA200mW
TPBC847SNPNSOT-36345V100mA300mW
MMDT3904NPNSOT-363-40V200mA
BC847SNPNSOT-36345V100mA200mW
View all SOT-363 NPN Transistors ›