BC847S Transistor Datasheet & Specifications

NPN BJT | HT(Shenzhen Jinyu Semicon)

NPNSOT-363General Purpose
VCEO
45V
Ic Max
100mA
Pd Max
200mW
Gain
-
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Quick Reference

The BC847S is a NPN bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847S datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageSOT-363Physical mounting
VCEO45VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo200MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
DSS4240Y-7NPNSOT-36340V2A625mW
BC847BDW1T1G-GKNPNSOT-36345V100mA200mW
MMDT2222ANPNSOT-36340V600mA200mW
HMMDT39047FNPNSOT-36340V200mA200mW
BC847BDW1T1G-FSNPNSOT-36345V100mA200mW
BCM847BSNPNSOT-36345V100mA200mW
BC847BSQNPNSOT-36345V100mA200mW
TPMMDT4401NPNSOT-36340V600mA200mW
TPBC847SNPNSOT-36345V100mA300mW
MMDT3904NPNSOT-363-40V200mA
View all SOT-363 NPN Transistors ›