TPSI4896DY-T1-GE3 MOSFET Datasheet & Specifications

N-Channel SOP-8 Logic-Level TECH PUBLIC
Vds Max
100V
Id Max
8A
Rds(on)
24mΩ@10V
Vgs(th)
3V

Quick Reference

The TPSI4896DY-T1-GE3 is an N-Channel MOSFET in a SOP-8 package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)8AMax current handling
Power Dissipation (Pd)3.5WMax thermal limit
On-Resistance (Rds(on))24mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)78nC@10VSwitching energy
Input Capacitance (Ciss)3.4nFInternal gate capacitance
Output Capacitance (Coss)110pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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