FDS89161LZ-HXY MOSFET Datasheet & Specifications

N-Channel SOP-8 Logic-Level HXY MOSFET
Vds Max
100V
Id Max
8A
Rds(on)
120mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The FDS89161LZ-HXY is an N-Channel MOSFET in a SOP-8 package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 8A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)8AMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
On-Resistance (Rds(on))120mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)19.5nC@10VSwitching energy
Input Capacitance (Ciss)1.535nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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