OSM15N10X2 MOSFET Datasheet & Specifications

N-Channel SOP-8 Logic-Level orisilicon
Vds Max
100V
Id Max
15A
Rds(on)
130mΩ@10V
Vgs(th)
3V

Quick Reference

The OSM15N10X2 is an N-Channel MOSFET in a SOP-8 package, manufactured by orisilicon. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 15A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerorisiliconOriginal Manufacturer
PackageSOP-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)15AMax current handling
Power Dissipation (Pd)-Max thermal limit
On-Resistance (Rds(on))130mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)20nC@4VSwitching energy
Input Capacitance (Ciss)920pFInternal gate capacitance
Output Capacitance (Coss)55pFInternal output capacitance
Operating Temp-40℃~+85℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TPH8R80ANH N-Channel SOP-8 100V 59A 7.4mΩ@10V 2V
TOSHIBA 📄 PDF
L1Q(M N-Channel SOP-8 100V 16A 13mΩ@4.5V 2.5V
Winsok Semicon 📄 PDF