MEE4294-G MOSFET Datasheet & Specifications
N-Channel
SOP-8
Logic-Level
MATSUKI
Vds Max
100V
Id Max
11.3A
Rds(on)
15.5mΩ@4.5V
Vgs(th)
3V
Quick Reference
The MEE4294-G is an N-Channel MOSFET in a SOP-8 package, manufactured by MATSUKI. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 11.3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MATSUKI | Original Manufacturer |
| Package | SOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 11.3A | Max current handling |
| Power Dissipation (Pd) | 2.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 15.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 2.071nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TPH8R80ANH | N-Channel | SOP-8 | 100V | 59A | 7.4mΩ@10V | 2V | TOSHIBA 📄 PDF |
| L1Q(M | N-Channel | SOP-8 | 100V | 14A | 12mΩ@4.5V | 2.2V | NCE 📄 PDF |
| NCEP092N10AS | N-Channel | SOP-8 | 100V | 16A | 13mΩ@4.5V | 2.5V | Winsok Semicon 📄 PDF |
| WSP16N10 | N-Channel | SOP-8 | 100V | 15A | 130mΩ@10V | 3V | orisilicon 📄 PDF |