SI2309A MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level UMW
Vds Max
60V
Id Max
1.25A
Rds(on)
340mΩ@10V;550mΩ@4.5V
Vgs(th)
3V

Quick Reference

The SI2309A is an P-Channel MOSFET in a SOT-23 package, manufactured by UMW. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 1.25A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)1.25AMax current handling
Power Dissipation (Pd)1.25WMax thermal limit
On-Resistance (Rds(on))340mΩ@10V;550mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)5.4nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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BRCS5P06MA P-Channel SOT-23 60V 5A 103mΩ@4.5V 1.5V
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SQ2309CES-T1_GE3 P-Channel SOT-23 60V 1.7A 500mΩ@4.5V 2.5V
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SQ2337CES-T1_GE3 P-Channel SOT-23 80V 2.2A 241mΩ@10V 2V
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