HL2309 MOSFET Datasheet & Specifications

P-Channel SOT-23 Logic-Level R+O
Vds Max
60V
Id Max
1.25A
Rds(on)
275mΩ@10V
Vgs(th)
3V

Quick Reference

The HL2309 is an P-Channel MOSFET in a SOT-23 package, manufactured by R+O. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 1.25A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)1.25AMax current handling
Power Dissipation (Pd)1.25WMax thermal limit
On-Resistance (Rds(on))275mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)5.4nC@10VSwitching energy
Input Capacitance (Ciss)380pFInternal gate capacitance
Output Capacitance (Coss)32pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BRCS5P06MA P-Channel SOT-23 60V 5A 103mΩ@4.5V 1.5V
BLUE ROCKET 📄 PDF
SI2309 P-Channel SOT-23 60V 2A 160mΩ@10V 1.9V
GOODWORK 📄 PDF
SQ2361CEES-T1_GE3 P-Channel SOT-23 60V 2.8A 230mΩ@4.5V 2.5V
VISHAY 📄 PDF
TSM2309CX RFG P-Channel SOT-23 60V 3.1A 240mΩ@4.5V 2.5V
Taiwan Semico... 📄 PDF
SQ2309ES-T1_GE3 P-Channel SOT-23 60V 1.7A 336mΩ@10V 2.5V
VISHAY 📄 PDF
SI2309A P-Channel SOT-23 60V 1.25A 340mΩ@10V
550mΩ@4.5V
3V
SQ2309CES-T1_GE3 P-Channel SOT-23 60V 1.7A 500mΩ@4.5V 2.5V
VISHAY 📄 PDF
SQ2337CES-T1_GE3 P-Channel SOT-23 80V 2.2A 241mΩ@10V 2V
VISHAY 📄 PDF