SED4060G MOSFET Datasheet & Specifications

N-Channel DFN-8(5x6) Logic-Level SINO-IC
Vds Max
40V
Id Max
60A
Rds(on)
9.5mΩ@10V
Vgs(th)
2.2V

Quick Reference

The SED4060G is an N-Channel MOSFET in a DFN-8(5x6) package, manufactured by SINO-IC. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSINO-ICOriginal Manufacturer
PackageDFN-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)65WMax thermal limit
On-Resistance (Rds(on))9.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)14.5nC@10VSwitching energy
Input Capacitance (Ciss)942pFInternal gate capacitance
Output Capacitance (Coss)309pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

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AONS66917 N-Channel DFN-8(5x6) 100V 100A 2.9mΩ@10V 2.2V
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4.3mΩ@4.5V
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