BSC097N06NS-HXY MOSFET Datasheet & Specifications
N-Channel
DFN-8(5x6)
Logic-Level
HXY MOSFET
Vds Max
60V
Id Max
65A
Rds(on)
11mΩ@10V
Vgs(th)
2.5V
Quick Reference
The BSC097N06NS-HXY is an N-Channel MOSFET in a DFN-8(5x6) package, manufactured by HXY MOSFET. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 65A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | DFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 65A | Max current handling |
| Power Dissipation (Pd) | 89W | Max thermal limit |
| On-Resistance (Rds(on)) | 11mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 19nC@10V | Switching energy |
| Input Capacitance (Ciss) | 930pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CSD18540Q5B(TOKMAS) | N-Channel | DFN-8(5x6) | 60V | 200A | 2.3mΩ | 2.5V | Tokmas 📄 PDF |
| PDC6974X-5 | N-Channel | DFN-8(5x6) | 65V | 130A | 2.3mΩ@10V | 1.6V | luJing 📄 PDF |
| AONS66917 | N-Channel | DFN-8(5x6) | 100V | 100A | 2.9mΩ@10V | 2.2V | AOS 📄 PDF |
| H100N10FB | N-Channel | DFN-8(5x6) | 100V | 100A | 3mΩ@10V 4.3mΩ@4.5V |
1.8V | Huixin 📄 PDF |
| CMSA070N10 | N-Channel | DFN-8(5x6) | 100V | 90A | 7mΩ@10V | 3V | Cmos 📄 PDF |