H100N10FB MOSFET Datasheet & Specifications
N-Channel
DFN-8(5x6)
Logic-Level
Huixin
Vds Max
100V
Id Max
100A
Rds(on)
3mΩ@10V;4.3mΩ@4.5V
Vgs(th)
1.8V
Quick Reference
The H100N10FB is an N-Channel MOSFET in a DFN-8(5x6) package, manufactured by Huixin. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Huixin | Original Manufacturer |
| Package | DFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| On-Resistance (Rds(on)) | 3mΩ@10V;4.3mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.8V | Voltage required to turn on |
| Gate Charge (Qg) | 65nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.1nF | Internal gate capacitance |
| Output Capacitance (Coss) | 830pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |