AONS66917 MOSFET Datasheet & Specifications
N-Channel
DFN-8(5x6)
Logic-Level
AOS
Vds Max
100V
Id Max
100A
Rds(on)
2.9mΩ@10V
Vgs(th)
2.2V
Quick Reference
The AONS66917 is an N-Channel MOSFET in a DFN-8(5x6) package, manufactured by AOS. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | AOS | Original Manufacturer |
| Package | DFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 2.9mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 80nC@10V | Switching energy |
| Input Capacitance (Ciss) | 5.94nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.475nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |