SED10070GG MOSFET Datasheet & Specifications
N-Channel
DFN-8(5x6)
High-Current
SINO-IC
Vds Max
100V
Id Max
70A
Rds(on)
9.8mΩ@10V
Vgs(th)
4V
Quick Reference
The SED10070GG is an N-Channel MOSFET in a DFN-8(5x6) package, manufactured by SINO-IC. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 70A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SINO-IC | Original Manufacturer |
| Package | DFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 70A | Max current handling |
| Power Dissipation (Pd) | 170W | Max thermal limit |
| On-Resistance (Rds(on)) | 9.8mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 96nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.4nF | Internal gate capacitance |
| Output Capacitance (Coss) | 320pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| AONS66917 | N-Channel | DFN-8(5x6) | 100V | 100A | 2.9mΩ@10V | 2.2V | AOS 📄 PDF |
| H100N10FB | N-Channel | DFN-8(5x6) | 100V | 100A | 3mΩ@10V 4.3mΩ@4.5V |
1.8V | Huixin 📄 PDF |
| KCY3310A | N-Channel | DFN-8(5x6) | 100V | 85A | 5.8mΩ@10V | 4V | KIA Semicon T... 📄 PDF |
| CMSA070N10 | N-Channel | DFN-8(5x6) | 100V | 90A | 7mΩ@10V | 3V | Cmos 📄 PDF |