KCY3310A MOSFET Datasheet & Specifications
N-Channel
DFN-8(5x6)
High-Current
KIA Semicon Tech
Vds Max
100V
Id Max
85A
Rds(on)
5.8mΩ@10V
Vgs(th)
4V
Quick Reference
The KCY3310A is an N-Channel MOSFET in a DFN-8(5x6) package, manufactured by KIA Semicon Tech. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 85A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | KIA Semicon Tech | Original Manufacturer |
| Package | DFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 85A | Max current handling |
| Power Dissipation (Pd) | 90W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.8mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 66nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.6nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.25nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |