S9018 Datasheet & Equivalents

NPN SOT-23 General Purpose MDD(Microdiode Semiconductor)
VCEO
15V
Ic Max
50mA
Pd Max
200mW
hFE Gain
70

Quick Reference

The S9018 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by MDD(Microdiode Semiconductor). It supports a breakdown voltage of 15V and continuous collector current of 50mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMDD(Microdiode Semiconductor)Original Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)15VMax breakdown voltage
Collector Current (Ic)50mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)70Base signal amplification ratio
Transition Frequency (fT)800MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC2757 NPN SOT-23 15V 50mA 195 150mW
BF570 NPN SOT-23 15V 100mA 40 250mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 20V 50mA 20 225mW
2SC2714Y NPN SOT-23 20V 50mA 200 200mW
MMBTH10 NPN SOT-23 25V 50mA 60 225mW
Guangdong Hot... ๐Ÿ“„ PDF
MMBTH10 NPN SOT-23 25V 50mA 60 225mW
MMBTH10 NPN SOT-23 25V 50mA 60 225mW
MMBTH10 NPN SOT-23 25V 50mA 200 225mW
MMBTH10-6AF NPN SOT-23 25V 50mA 400 300mW
MMBT5089LT1G NPN SOT-23 25V 100mA 400 200mW
MMBT5089 NPN SOT-23 25V 100mA 1000 200mW
S9014 NPN SOT-23 30V 50mA 300 225mW
MMBT5088LT1G NPN SOT-23 30V 100mA 110 225mW
BC848BLT1G NPN SOT-23 30V 100mA 110 225mW
BC848CLT1G NPN SOT-23 30V 100mA 110 225mW
BC849CLT1G NPN SOT-23 30V 100mA 110 225mW
LBC848ALT1G NPN SOT-23 30V 100mA 110 200mW
BC848A NPN SOT-23 30V 100mA 125 200mW
AD-BC848 NPN SOT-23 30V 100mA 200 250mW
Nexperia ๐Ÿ“„ PDF
BC848B NPN SOT-23 30V 100mA 200 200mW