MMBTH10-6AF Datasheet & Equivalents

NPN SOT-23 General Purpose FOSAN
VCEO
25V
Ic Max
50mA
Pd Max
225mW
hFE Gain
200

Quick Reference

The MMBTH10-6AF is a NPN bipolar junction transistor in a SOT-23 package, manufactured by FOSAN. It supports a breakdown voltage of 25V and continuous collector current of 50mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFOSANOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)50mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)200Base signal amplification ratio
Transition Frequency (fT)650MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)3VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTH10 NPN SOT-23 25V 50mA 60 225mW
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MMBTH10 NPN SOT-23 25V 50mA 60 225mW
MMBTH10 NPN SOT-23 25V 50mA 60 225mW
MMBT5089LT1G NPN SOT-23 25V 50mA 400 300mW
MMBT5089 NPN SOT-23 25V 100mA 400 200mW
S9014 NPN SOT-23 25V 100mA 1000 200mW
MMBT5088LT1G NPN SOT-23 30V 50mA 300 225mW
BC848B NPN SOT-23 30V 100mA 200 250mW
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215 NPN SOT-23 30V 100mA 200 200mW
BC848B NPN SOT-23 30V 100mA 200 200mW
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BC848B NPN SOT-23 30V 100mA 220 200mW
BC848A NPN SOT-23 30V 100mA 240 250mW
BC850C NPN SOT-23 30V 100mA 125 200mW
AD-BC848 NPN SOT-23 30V 100mA 110 225mW
BC848BLT1G NPN SOT-23 30V 100mA 110 225mW
BC848CLT1G NPN SOT-23 30V 100mA 110 225mW
BC849CLT1G NPN SOT-23 30V 100mA 110 225mW
LBC848ALT1G NPN SOT-23 30V 100mA 110 200mW
BC848A NPN SOT-23 30V 100mA 420 300mW
BC848C-7-F NPN SOT-23 30V 100mA 420 200mW
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