MMBTH10 Datasheet & Equivalents
NPN
SOT-23
General Purpose
Guangdong Hottech
VCEO
25V
Ic Max
50mA
Pd Max
225mW
hFE Gain
60
Quick Reference
The MMBTH10 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by Guangdong Hottech. It supports a breakdown voltage of 25V and continuous collector current of 50mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Guangdong Hottech | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 25V | Max breakdown voltage |
| Collector Current (Ic) | 50mA | Max current handling |
| Power Dissipation (Pd) | 225mW | Max thermal limit |
| DC Current Gain (hFE) | 60 | Base signal amplification ratio |
| Transition Frequency (fT) | 650MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 300mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| MMBTH10-6AF | NPN | SOT-23 | 25V | 50mA | 200 | 225mW | FOSAN 📄 PDF |
| MMBT5089LT1G | NPN | SOT-23 | 25V | 50mA | 400 | 300mW | onsemi 📄 PDF |
| MMBT5089 | NPN | SOT-23 | 25V | 100mA | 400 | 200mW | Shikues 📄 PDF |
| S9014 | NPN | SOT-23 | 25V | 100mA | 1000 | 200mW | JSMSEMI 📄 PDF |
| MMBT5088LT1G | NPN | SOT-23 | 30V | 50mA | 300 | 225mW | onsemi 📄 PDF |
| BC848BLT1G | NPN | SOT-23 | 30V | 100mA | 110 | 225mW | onsemi 📄 PDF |
| BC848CLT1G | NPN | SOT-23 | 30V | 100mA | 110 | 225mW | onsemi 📄 PDF |
| BC849CLT1G | NPN | SOT-23 | 30V | 100mA | 110 | 225mW | onsemi 📄 PDF |
| LBC848ALT1G | NPN | SOT-23 | 30V | 100mA | 110 | 225mW | LRC 📄 PDF |
| BC848A | NPN | SOT-23 | 30V | 100mA | 110 | 200mW | JUXING 📄 PDF |
| AD-BC848 | NPN | SOT-23 | 30V | 100mA | 125 | 200mW | JSCJ 📄 PDF |
| BC848B | NPN | SOT-23 | 30V | 100mA | 200 | 250mW | Nexperia 📄 PDF |
| 215 | NPN | SOT-23 | 30V | 100mA | 200 | 200mW | BORN 📄 PDF |
| BC848B | NPN | SOT-23 | 30V | 100mA | 200 | 200mW | HXY MOSFET 📄 PDF |
| BC848B | NPN | SOT-23 | 30V | 100mA | 220 | 200mW | ALJ 📄 PDF |
| BC848A | NPN | SOT-23 | 30V | 100mA | 240 | 250mW | Shikues 📄 PDF |
| BC850C | NPN | SOT-23 | 30V | 100mA | 420 | 300mW | DIODES 📄 PDF |
| BC848C-7-F | NPN | SOT-23 | 30V | 100mA | 420 | 200mW | Guangdong Hot... 📄 PDF |
| BC848C | NPN | SOT-23 | 30V | 100mA | 450 | 250mW | Nexperia 📄 PDF |
| BC849C | NPN | SOT-23 | 30V | 100mA | 800 | 200mW | XCH 📄 PDF |