MMBTH10 Datasheet & Equivalents

NPN SOT-23 General Purpose UMW
VCEO
25V
Ic Max
50mA
Pd Max
225mW
hFE Gain
60

Quick Reference

The MMBTH10 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by UMW. It supports a breakdown voltage of 25V and continuous collector current of 50mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)50mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)650MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTH10-6AF NPN SOT-23 25V 50mA 200 225mW
MMBT5089LT1G NPN SOT-23 25V 50mA 400 300mW
MMBT5089 NPN SOT-23 25V 100mA 400 200mW
S9014 NPN SOT-23 25V 100mA 1000 200mW
MMBT5088LT1G NPN SOT-23 30V 50mA 300 225mW
BC848BLT1G NPN SOT-23 30V 100mA 110 225mW
BC848CLT1G NPN SOT-23 30V 100mA 110 225mW
BC849CLT1G NPN SOT-23 30V 100mA 110 225mW
LBC848ALT1G NPN SOT-23 30V 100mA 110 225mW
BC848A NPN SOT-23 30V 100mA 110 200mW
AD-BC848 NPN SOT-23 30V 100mA 125 200mW
BC848B NPN SOT-23 30V 100mA 200 250mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 30V 100mA 200 200mW
BC848B NPN SOT-23 30V 100mA 200 200mW
HXY MOSFET ๐Ÿ“„ PDF
BC848B NPN SOT-23 30V 100mA 220 200mW
BC848A NPN SOT-23 30V 100mA 240 250mW
BC850C NPN SOT-23 30V 100mA 420 300mW
BC848C-7-F NPN SOT-23 30V 100mA 420 200mW
Guangdong Hot... ๐Ÿ“„ PDF
BC848C NPN SOT-23 30V 100mA 450 250mW
Nexperia ๐Ÿ“„ PDF
BC849C NPN SOT-23 30V 100mA 800 200mW