PZTA29 Datasheet & Equivalents
NPN
SOT-223
General Purpose
onsemi
VCEO
100V
Ic Max
800mA
Pd Max
1W
hFE Gain
10000
Quick Reference
The PZTA29 is a NPN bipolar junction transistor in a SOT-223 package, manufactured by onsemi. It supports a breakdown voltage of 100V and continuous collector current of 800mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 800mA | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | 10000 | Base signal amplification ratio |
| Transition Frequency (fT) | 125MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 1.5V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃@(Tj) | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BCP56-16-AU_R2_000A1 | NPN | SOT-223 | 100V | 1A | 100 | 2.6W | PANJIT 📄 PDF |
| FZT493TA | NPN | SOT-223 | 100V | 1A | 100 | 3W | DIODES 📄 PDF |
| NSV1C201MZ4T1G | NPN | SOT-223 | 100V | 2A | 150 | 2W | onsemi 📄 PDF |
| FZT653QTA | NPN | SOT-223 | 100V | 2A | 55 | 1.2W | DIODES 📄 PDF |
| FZT653TA | NPN | SOT-223 | 100V | 2A | 55 | 3W | DIODES 📄 PDF |
| FZT694BTA | NPN | SOT-223 | 120V | 1A | 400 | 1.6W | DIODES 📄 PDF |
| FZT605 | NPN | SOT-223 | 120V | 1.5A | 2000 | 3W | DIODES 📄 PDF |
| FZT605TA | NPN | SOT-223 | 120V | 1.5A | 2000 | 2W | DIODES 📄 PDF |
| FZT600TA | NPN | SOT-223 | 140V | 2A | 2000 | 2W | DIODES 📄 PDF |