FZT653QTA Datasheet & Equivalents
NPN
SOT-223
General Purpose
DIODES
VCEO
100V
Ic Max
2A
Pd Max
1.2W
hFE Gain
55
Quick Reference
The FZT653QTA is a NPN bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 100V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 1.2W | Max thermal limit |
| DC Current Gain (hFE) | 55 | Base signal amplification ratio |
| Transition Frequency (fT) | 175MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 300mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| FZT653TA | NPN | SOT-223 | 100V | 2A | 55 | 3W | DIODES 📄 PDF |
| NSV1C201MZ4T1G | NPN | SOT-223 | 100V | 2A | 150 | 2W | onsemi 📄 PDF |
| CZT31C | NPN | SOT-223 | 100V | 3A | 10 | 1W | JSCJ 📄 PDF |
| FZT653TA | NPN | SOT-223 | 100V | 3A | - | 2W | YFW 📄 PDF |
| PZT1816G-S-AA3-R | NPN | SOT-223 | 100V | 4A | 140 | 1W | UTC 📄 PDF |
| CZT122 | NPN | SOT-223 | 100V | 5A | 1000 | 1W | R+O 📄 PDF |
| FZT600TA | NPN | SOT-223 | 140V | 2A | 2000 | 2W | DIODES 📄 PDF |
| FZT855TA | NPN | SOT-223 | 150V | 5A | 10 | 3W | DIODES 📄 PDF |