NSV1C201MZ4T1G Datasheet & Equivalents

NPN SOT-223 General Purpose onsemi
VCEO
100V
Ic Max
2A
Pd Max
2W
hFE Gain
150

Quick Reference

The NSV1C201MZ4T1G is a NPN bipolar junction transistor in a SOT-223 package, manufactured by onsemi. It supports a breakdown voltage of 100V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)150Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FZT653QTA NPN SOT-223 100V 2A 55 1.2W
FZT653TA NPN SOT-223 100V 2A 55 3W
CZT31C NPN SOT-223 100V 3A 10 1W
FZT653TA NPN SOT-223 100V 3A - 2W
PZT1816G-S-AA3-R NPN SOT-223 100V 4A 140 1W
CZT122 NPN SOT-223 100V 5A 1000 1W
FZT600TA NPN SOT-223 140V 2A 2000 2W
FZT855TA NPN SOT-223 150V 5A 10 3W