FZT493TA Datasheet & Equivalents

NPN SOT-223 High Power DIODES
VCEO
100V
Ic Max
1A
Pd Max
3W
hFE Gain
100

Quick Reference

The FZT493TA is a NPN bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 100V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)3WMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BCP56-16-AU_R2_000A1 NPN SOT-223 100V 1A 100 2.6W
FZT653QTA NPN SOT-223 100V 2A 55 1.2W
FZT653TA NPN SOT-223 100V 2A 55 3W
NSV1C201MZ4T1G NPN SOT-223 100V 2A 150 2W
FZT694BTA NPN SOT-223 120V 1A 400 1.6W
FZT605 NPN SOT-223 120V 1.5A 2000 3W
FZT605TA NPN SOT-223 120V 1.5A 2000 2W
FZT600TA NPN SOT-223 140V 2A 2000 2W