PZT651T1G Datasheet & Equivalents

NPN SOT-223 General Purpose onsemi
VCEO
60V
Ic Max
2A
Pd Max
800mW
hFE Gain
75

Quick Reference

The PZT651T1G is a NPN bipolar junction transistor in a SOT-223 package, manufactured by onsemi. It supports a breakdown voltage of 60V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)800mWMax thermal limit
DC Current Gain (hFE)75Base signal amplification ratio
Transition Frequency (fT)75MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FZT651TA-DW NPN SOT-223 60V 3A 75 2W
FZT651QTC NPN SOT-223 60V 3A 80 3W
FZT651TA NPN SOT-223 60V 3A 80 3W
FZT651TC NPN SOT-223 60V 3A 80 3W
FZT651QTA NPN SOT-223 60V 3A 100 3W
2STN1360 NPN SOT-223 60V 3A 160 1.6W
SZT560A NPN SOT-223 60V 3A 400 1.25W
STN851 NPN SOT-223 60V 5A 90 1.6W
FZT692BTA NPN SOT-223 70V 2A 500 3W
FZT603QTA NPN SOT-223 80V 2A 5000 1.2W
FZT603TA NPN SOT-223 80V 2A 5000 2W
FZT653QTA NPN SOT-223 100V 2A 55 1.2W
FZT653TA NPN SOT-223 100V 2A 55 3W
NSV1C201MZ4T1G NPN SOT-223 100V 2A 150 2W
CZT31C NPN SOT-223 100V 3A 10 1W
FZT653TA NPN SOT-223 100V 3A - 2W
PZT1816G-S-AA3-R NPN SOT-223 100V 4A 140 1W
CZT122 NPN SOT-223 100V 5A 1000 1W
FZT600TA NPN SOT-223 140V 2A 2000 2W
FZT855TA NPN SOT-223 150V 5A 10 3W