FZT603TA Datasheet & Equivalents

NPN SOT-223 General Purpose DIODES
VCEO
80V
Ic Max
2A
Pd Max
2W
hFE Gain
5000

Quick Reference

The FZT603TA is a NPN bipolar junction transistor in a SOT-223 package, manufactured by DIODES. It supports a breakdown voltage of 80V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)5000Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)1.13VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current10uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒ@(Tj)Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FZT603QTA NPN SOT-223 80V 2A 5000 1.2W
NSV1C201MZ4T1G NPN SOT-223 100V 2A 150 2W
FZT653QTA NPN SOT-223 100V 2A 55 1.2W
FZT653TA NPN SOT-223 100V 2A 55 3W
CZT31C NPN SOT-223 100V 3A 10 1W
FZT653TA NPN SOT-223 100V 3A - 2W
PZT1816G-S-AA3-R NPN SOT-223 100V 4A 140 1W
CZT122 NPN SOT-223 100V 5A 1000 1W
FZT600TA NPN SOT-223 140V 2A 2000 2W
FZT855TA NPN SOT-223 150V 5A 10 3W