PTD4080 MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level HT(Shenzhen Jinyu Semicon)
Vds Max
40V
Id Max
80A
Rds(on)
4.8mΩ@10V
Vgs(th)
1.6V

Quick Reference

The PTD4080 is an N-Channel MOSFET in a TO-252 package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 40V and a continuous drain current of 80A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)80AMax current handling
Power Dissipation (Pd)58WMax thermal limit
On-Resistance (Rds(on))4.8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)37nC@10VSwitching energy
Input Capacitance (Ciss)1.4nFInternal gate capacitance
Output Capacitance (Coss)190pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CMD019N04L N-Channel TO-252 40V 150A 1.6mΩ@10V 2V
YJD120N04A N-Channel TO-252 40V 120A 2.8mΩ@10V 1V
YANGJIE 📄 PDF
DD3R5NG N-Channel TO-252 40V 120A 2.8mΩ@10V 1.5V
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HB04N060S N-Channel TO-252 40V 85A 4.1mΩ@10V 1.6V
HB06N047SG N-Channel TO-252 60V 110A 3.7mΩ@10V 1.7V
AOD2606-MS N-Channel TO-252 60V 80A 6mΩ@10V 1.4V
MSKSEMI 📄 PDF
SP010N04BGTH N-Channel TO-252 100V 120A 5mΩ@10V
6.5mΩ@4.5V
1.7V
Siliup 📄 PDF
HB10N085SG N-Channel TO-252 100V 80A 6.7mΩ@10V 1.7V