HB04N060S MOSFET Datasheet & Specifications
N-Channel
TO-252
Logic-Level
R+O
Vds Max
40V
Id Max
85A
Rds(on)
4.1mΩ@10V
Vgs(th)
1.6V
Quick Reference
The HB04N060S is an N-Channel MOSFET in a TO-252 package, manufactured by R+O. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 85A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 85A | Max current handling |
| Power Dissipation (Pd) | 80W | Max thermal limit |
| On-Resistance (Rds(on)) | 4.1mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 72nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.787nF@20V | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CMD019N04L | N-Channel | TO-252 | 40V | 150A | 1.6mΩ@10V | 2V | Cmos 📄 PDF |
| YJD120N04A | N-Channel | TO-252 | 40V | 120A | 2.8mΩ@10V | 1V | YANGJIE 📄 PDF |
| DD3R5NG | N-Channel | TO-252 | 40V | 120A | 2.8mΩ@10V | 1.5V | DOINGTER 📄 PDF |
| HB06N047SG | N-Channel | TO-252 | 60V | 110A | 3.7mΩ@10V | 1.7V | R+O 📄 PDF |
| SP010N04BGTH | N-Channel | TO-252 | 100V | 120A | 5mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |