HB10N085SG MOSFET Datasheet & Specifications
N-Channel
TO-252
Logic-Level
R+O
Vds Max
100V
Id Max
80A
Rds(on)
6.7mΩ@10V
Vgs(th)
1.7V
Quick Reference
The HB10N085SG is an N-Channel MOSFET in a TO-252 package, manufactured by R+O. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 80A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 80A | Max current handling |
| Power Dissipation (Pd) | 100W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.7mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.7V | Voltage required to turn on |
| Gate Charge (Qg) | 36nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.031nF@50V | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP010N04BGTH | N-Channel | TO-252 | 100V | 120A | 5mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |