NTF2955T1G MOSFET Datasheet & Specifications

P-Channel SOT-223 Standard Power onsemi
Vds Max
60V
Id Max
2.6A
Rds(on)
185mΩ@10V
Vgs(th)
4V
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Quick Reference

The NTF2955T1G is an P-Channel MOSFET in a SOT-223 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 2.6A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)2.6AMax current handling
Power Dissipation (Pd)2.3WMax thermal limit
On-Resistance (Rds(on))185mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)14.3nC@10VSwitching energy
Input Capacitance (Ciss)492pFInternal gate capacitance
Output Capacitance (Coss)165pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HT06P460S P-Channel SOT-223 60V 8A 26mΩ@10V 1.5V
R+O 📄 PDF
DMP6023LE-13 P-Channel SOT-223 60V 7A 35mΩ@4.5V 3V
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NTF2955PT1G-VB P-Channel SOT-223 60V 7A 55mΩ@10V
65mΩ@4.5V		 2.5V
VBsemi Elec 📄 PDF
BSP170P-VB P-Channel SOT-223 60V 7A 55mΩ@10V 2.5V
VBsemi Elec 📄 PDF
HT06P1H3S P-Channel SOT-223 60V 4.3A 90mΩ@10V
125mΩ@4.5V		 2.5V
R+O 📄 PDF
BSP613PH6327 P-Channel SOT-223 60V 2.9A 110mΩ@10V 3V
Infineon 📄 PDF
S-LP03N060TZHG P-Channel SOT-223 60V 2.8A 170mΩ@10V
200mΩ@4.5V		 3V
LRC 📄 PDF
HSL3P20 P-Channel SOT-223 200V 3A 2.4Ω@10V 4V
HUASHUO 📄 PDF