BSP613PH6327 MOSFET Datasheet & Specifications

P-Channel SOT-223 Logic-Level Infineon
Vds Max
60V
Id Max
2.9A
Rds(on)
110mΩ@10V
Vgs(th)
3V

Quick Reference

The BSP613PH6327 is an P-Channel MOSFET in a SOT-223 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 2.9A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)2.9AMax current handling
Power Dissipation (Pd)1.8WMax thermal limit
On-Resistance (Rds(on))110mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)22nC@10VSwitching energy
Input Capacitance (Ciss)715pFInternal gate capacitance
Output Capacitance (Coss)230pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HT06P460S P-Channel SOT-223 60V 8A 26mΩ@10V 1.5V
DMP6023LE-13 P-Channel SOT-223 60V 7A 35mΩ@4.5V 3V
DIODES 📄 PDF
NTF2955PT1G-VB P-Channel SOT-223 60V 7A 55mΩ@10V
65mΩ@4.5V
2.5V
VBsemi Elec 📄 PDF
BSP170P-VB P-Channel SOT-223 60V 7A 55mΩ@10V 2.5V
VBsemi Elec 📄 PDF
HT06P1H3S P-Channel SOT-223 60V 4.3A 90mΩ@10V
125mΩ@4.5V
2.5V