BSP170P-VB MOSFET Datasheet & Specifications

P-Channel SOT-223 Logic-Level VBsemi Elec
Vds Max
60V
Id Max
7A
Rds(on)
55mΩ@10V
Vgs(th)
2.5V

Quick Reference

The BSP170P-VB is an P-Channel MOSFET in a SOT-223 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 7A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVBsemi ElecOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)7AMax current handling
Power Dissipation (Pd)2.1WMax thermal limit
On-Resistance (Rds(on))55mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)38nC@10VSwitching energy
Input Capacitance (Ciss)1.5nFInternal gate capacitance
Output Capacitance (Coss)200pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HT06P460S P-Channel SOT-223 60V 8A 26mΩ@10V 1.5V
DMP6023LE-13 P-Channel SOT-223 60V 7A 35mΩ@4.5V 3V
DIODES 📄 PDF
NTF2955PT1G-VB P-Channel SOT-223 60V 7A 55mΩ@10V
65mΩ@4.5V
2.5V
VBsemi Elec 📄 PDF