HT06P1H3S MOSFET Datasheet & Specifications
P-Channel
SOT-223
Logic-Level
R+O
Vds Max
60V
Id Max
4.3A
Rds(on)
90mΩ@10V;125mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The HT06P1H3S is an P-Channel MOSFET in a SOT-223 package, manufactured by R+O. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 4.3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | R+O | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.3A | Max current handling |
| Power Dissipation (Pd) | 3.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 90mΩ@10V;125mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 25nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HT06P460S | P-Channel | SOT-223 | 60V | 8A | 26mΩ@10V | 1.5V | R+O 📄 PDF |
| DMP6023LE-13 | P-Channel | SOT-223 | 60V | 7A | 35mΩ@4.5V | 3V | DIODES 📄 PDF |
| NTF2955PT1G-VB | P-Channel | SOT-223 | 60V | 7A | 55mΩ@10V 65mΩ@4.5V |
2.5V | VBsemi Elec 📄 PDF |
| BSP170P-VB | P-Channel | SOT-223 | 60V | 7A | 55mΩ@10V | 2.5V | VBsemi Elec 📄 PDF |