MMDT3906 Transistor Datasheet & Specifications

PNP BJT | LGE

PNPSOT-363General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
200mW
Gain
-
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Quick Reference

The MMDT3906 is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMDT3906 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo250MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MBT3906DW1T1G-HXYPNPSOT-36340V200mA200mW
MMBT3906WHPNPSOT-36340V200mA200mW
BCM857BSPNPSOT-36345V200mA300mW
MMDT3906PNPSOT-36340V200mA200mW
BC857BSPNPSOT-36345V200mA300mW
MMDT3906DWPNPSOT-363-40V200mA
BC857BSPNPSOT-36345V200mA300mW
BCM857BSPNPSOT-36345V200mA300mW
BC857BSPNPSOT-36345V200mA300mW
MMDT2227PNPSOT-36340V600mA200mW
View all SOT-363 PNP Transistors ›