BCM857BS Transistor Datasheet & Specifications

PNP BJT | FUXINSEMI

PNPSOT-363General Purpose
VCEO
45V
Ic Max
200mA
Pd Max
300mW
Gain
420
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Quick Reference

The BCM857BS is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 45V breakdown voltage and 200mA continuous collector current. Download the BCM857BS datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerFUXINSEMIOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO45VBreakdown voltage
IC Max200mACollector current
Pd Max300mWPower dissipation
Gain420DC current gain
Frequency200MHzTransition speed
VCEsat650mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MBT3906DW1T1G-HXYPNPSOT-36340V200mA200mW
MMDT3906PNPSOT-36340V200mA200mW
MMBT3906WHPNPSOT-36340V200mA200mW
MMDT3906PNPSOT-36340V200mA200mW
BC857BSPNPSOT-36345V200mA300mW
MMDT3906DWPNPSOT-363-40V200mA
BC857BSPNPSOT-36345V200mA300mW
BCM857BSPNPSOT-36345V200mA300mW
BC857BSPNPSOT-36345V200mA300mW
MMDT2227PNPSOT-36340V600mA200mW
View all SOT-363 PNP Transistors ›