MMBT3906WH Transistor Datasheet & Specifications

PNP BJT | Jingdao Microelectronics

PNPSOT-363General Purpose
VCEO
40V
Ic Max
200mA
Pd Max
200mW
Gain
300
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Quick Reference

The MMBT3906WH is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the MMBT3906WH datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJingdao MicroelectronicsOriginal Manufacturer
PackageSOT-363Physical mounting
VCEO40VBreakdown voltage
IC Max200mACollector current
Pd Max200mWPower dissipation
Gain300DC current gain
Frequency300MHzTransition speed
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MBT3906DW1T1G-HXYPNPSOT-36340V200mA200mW
MMDT3906PNPSOT-36340V200mA200mW
BCM857BSPNPSOT-36345V200mA300mW
MMDT3906PNPSOT-36340V200mA200mW
BC857BSPNPSOT-36345V200mA300mW
MMDT3906DWPNPSOT-363-40V200mA
BC857BSPNPSOT-36345V200mA300mW
BCM857BSPNPSOT-36345V200mA300mW
BC857BSPNPSOT-36345V200mA300mW
MMDT2227PNPSOT-36340V600mA200mW
View all SOT-363 PNP Transistors ›