MMBT9013G Datasheet & Equivalents

NPN SOT-23 General Purpose ST(Semtech)
VCEO
30V
Ic Max
500mA
Pd Max
200mW
hFE Gain
100

Quick Reference

The MMBT9013G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by ST(Semtech). It supports a breakdown voltage of 30V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerST(Semtech)Original Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)30VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)600mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
KTC9013S-H-RTK/P NPN SOT-23 30V 500mA 96 350mW
S9013 NPN SOT-23 30V 500mA 300 300mW
PMBTA13 NPN SOT-23 30V 500mA 10000 250mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 30V 500mA 20000 300mW
BCV27 NPN SOT-23 30V 600mA 35 300mW
MMBT2222LT1G NPN SOT-23 30V 800mA 100 350mW
KTC8050S-D-RTK/P NPN SOT-23 30V 800mA 100 200mW
KTC3265Y NPN SOT-23 30V 800mA 320 200mW
KTC3265Y NPN SOT-23 30V 1A 100 500mW
FMMT489 NPN SOT-23 30V 1A 60 500mW
FMMT489TA NPN SOT-23 30V 1A - 200mW
GOODWORK ๐Ÿ“„ PDF
PBSS4140T-GK NPN SOT-23 30V 1A 300 310mW
MMBT489LT1G NPN SOT-23 30V 1A 300 480mW
Nexperia ๐Ÿ“„ PDF
PBSS4130T NPN SOT-23 30V 1.2A 20000 350mW
215 NPN SOT-23 32V 500mA 82 200mW
BCV27 NPN SOT-23 32V 500mA 82 200mW
2SC2411 NPN SOT-23 32V 500mA 82 200mW
2SC2411KT146Q NPN SOT-23 32V 800mA 100 225mW
2SC2411KT146R NPN SOT-23 32V 800mA 120 200mW
BCW65ALT1G NPN SOT-23 32V 800mA 80 300mW