BCV27 Datasheet & Equivalents

NPN SOT-23 General Purpose onsemi
VCEO
30V
Ic Max
1.2A
Pd Max
350mW
hFE Gain
20000

Quick Reference

The BCV27 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 30V and continuous collector current of 1.2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)30VMax breakdown voltage
Collector Current (Ic)1.2AMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)20000Base signal amplification ratio
Transition Frequency (fT)220MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒ@(Tj)Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
PBSS4230T NPN SOT-23 30V 2A 300 480mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 30V 3A 160 10W
D882SSG-P-AE3-R NPN SOT-23 30V 3A 30 1W
D882S NPN SOT-23 40V 1.5A 400 300mW
SS8050 NPN SOT-23 40V 2A 300 730mW
DSS4240T-7 NPN SOT-23 40V 2A 300 730mW
ZXTN4240F-7 NPN SOT-23 40V 2A 200 460mW
NSS40201LT1G NPN SOT-23 40V 2A 200 300mW
SS30101-Q NPN SOT-23 40V 2A - 300mW
GOODWORK
PBSS4240 NPN SOT-23 50V 1.25A 200 500mW
FMMTL619TA NPN SOT-23 50V 1.5A 100 225mW
LH8050QLT1G NPN SOT-23 50V 2A 300 625mW
HXY MOSFET ๐Ÿ“„ PDF
DSS4240T-7-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT4240-HXY NPN SOT-23 50V 2A 300 625mW
FMMT619-JSM NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT619TA-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4350T-HXY NPN SOT-23 50V 2A 300 250mW
GOODWORK ๐Ÿ“„ PDF
FMMT619 NPN SOT-23 50V 2A 200 625mW
FMMT619TA NPN SOT-23 50V 2A 200 625mW
FMMT619TC NPN SOT-23 50V 2A 200 350mW