MMBT2369ALT1G Datasheet & Equivalents

NPN SOT-23 General Purpose onsemi
VCEO
15V
Ic Max
200mA
Pd Max
300mW
hFE Gain
120

Quick Reference

The MMBT2369ALT1G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 15V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)15VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)4.5VMax emitter-base breakdown
Collector Cutoff Current400nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
KTC3880Y NPN SOT-23 18V 200mA 100 200mW
2SD2704KT146 NPN SOT-23 20V 300mA 820 200mW
MMBT2222A NPN SOT-23 20V 350mA 300 300mW
9013M-H NPN SOT-23 20V 500mA 144 450mW
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2SD2114KT146V NPN SOT-23 20V 500mA 820 200mW
MMBT4124LT1G NPN SOT-23 25V 200mA 120 225mW
S8050-J3Y NPN SOT-23 25V 300mA 350 300mW
MMS8050-H-TP NPN SOT-23 25V 500mA 120 300mW
S8050(0.5A) NPN SOT-23 25V 500mA 120 300mW
S8050(RANGE:120-200) NPN SOT-23 25V 500mA 120 300mW
S8050-HQ NPN SOT-23 25V 500mA 120 300mW
S9013 J3(RANGE:200-350) NPN SOT-23 25V 500mA 120 300mW
S9013(RANGE:120-200) NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
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S8050 NPN SOT-23 25V 500mA 120 300mW
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S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW