MMBT4124LT1G Datasheet & Equivalents

NPN SOT-23 General Purpose onsemi
VCEO
25V
Ic Max
200mA
Pd Max
225mW
hFE Gain
120

Quick Reference

The MMBT4124LT1G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 25V and continuous collector current of 200mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)200mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)300mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
S8050-J3Y NPN SOT-23 25V 300mA 350 300mW
MMS8050-H-TP NPN SOT-23 25V 500mA 120 300mW
S8050(0.5A) NPN SOT-23 25V 500mA 120 300mW
S8050(RANGE:120-200) NPN SOT-23 25V 500mA 120 300mW
S8050-HQ NPN SOT-23 25V 500mA 120 300mW
S9013 J3(RANGE:200-350) NPN SOT-23 25V 500mA 120 300mW
S9013(RANGE:120-200) NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
Jingdao Micro... ๐Ÿ“„ PDF
S8050 NPN SOT-23 25V 500mA 120 300mW
HXY MOSFET ๐Ÿ“„ PDF
S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
HXY MOSFET ๐Ÿ“„ PDF
S9013 NPN SOT-23 25V 500mA 120 300mW
S8050 J3Y(RANGE:200-350) NPN SOT-23 25V 500mA 200 300mW