S8050 Datasheet & Equivalents

NPN SOT-23 General Purpose Shikues
VCEO
25V
Ic Max
500mA
Pd Max
300mW
hFE Gain
120

Quick Reference

The S8050 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by Shikues. It supports a breakdown voltage of 25V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)600mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMS8050-H-TP NPN SOT-23 25V 500mA 120 300mW
S8050(0.5A) NPN SOT-23 25V 500mA 120 300mW
S8050(RANGE:120-200) NPN SOT-23 25V 500mA 120 300mW
S8050-HQ NPN SOT-23 25V 500mA 120 300mW
S9013 J3(RANGE:200-350) NPN SOT-23 25V 500mA 120 300mW
S9013(RANGE:120-200) NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
HXY MOSFET ๐Ÿ“„ PDF
S9013 NPN SOT-23 25V 500mA 120 300mW
S8050 J3Y(RANGE:200-350) NPN SOT-23 25V 500mA 200 300mW
S9013 NPN SOT-23 25V 500mA 40 300mW
S9013 NPN SOT-23 25V 500mA 200 300mW
S9013 NPN SOT-23 25V 500mA - 225mW
BC818-40LT1G NPN SOT-23 25V 500mA 250 225mW
MMS8050-H-HXY NPN SOT-23 25V 500mA 350 350mW
HXY MOSFET ๐Ÿ“„ PDF
MMS9013-H-TP NPN SOT-23 25V 500mA 350 300mW
MMS9013HE3-H-HXY NPN SOT-23 25V 500mA 350 350mW
HXY MOSFET ๐Ÿ“„ PDF