S8050-HQ Datasheet & Equivalents

NPN SOT-23 General Purpose RUILON
VCEO
25V
Ic Max
500mA
Pd Max
300mW
hFE Gain
120

Quick Reference

The S8050-HQ is a NPN bipolar junction transistor in a SOT-23 package, manufactured by RUILON. It supports a breakdown voltage of 25V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerRUILONOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)25VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMS8050-H-TP NPN SOT-23 25V 500mA 120 300mW
S8050(0.5A) NPN SOT-23 25V 500mA 120 300mW
S8050(RANGE:120-200) NPN SOT-23 25V 500mA 120 300mW
S9013 J3(RANGE:200-350) NPN SOT-23 25V 500mA 120 300mW
S9013(RANGE:120-200) NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
Jingdao Micro... ๐Ÿ“„ PDF
S8050 NPN SOT-23 25V 500mA 120 300mW
HXY MOSFET ๐Ÿ“„ PDF
S8050 NPN SOT-23 25V 500mA 120 300mW
S8050 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
S9013 NPN SOT-23 25V 500mA 120 300mW
HXY MOSFET ๐Ÿ“„ PDF
S9013 NPN SOT-23 25V 500mA 120 300mW
S8050 J3Y(RANGE:200-350) NPN SOT-23 25V 500mA 200 300mW
S8050 NPN SOT-23 25V 500mA 200 300mW
S8050 NPN SOT-23 25V 500mA 200 225mW