MJD45H11RLG Datasheet & Equivalents

PNP TO-252 (DPAK) High Power onsemi
VCEO
80V
Ic Max
8A
Pd Max
20W
hFE Gain
40

Quick Reference

The MJD45H11RLG is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by onsemi. It supports a breakdown voltage of 80V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)20WMax thermal limit
DC Current Gain (hFE)40Base signal amplification ratio
Transition Frequency (fT)90MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD45H11T4 PNP TO-252 (DPAK) 80V 8A 40 20W
NJVMJD45H11RLG PNP TO-252 (DPAK) 80V 8A 40 20W
NJVMJD45H11T4G PNP TO-252 (DPAK) 80V 8A 40 20W
MJD45H11G PNP TO-252 (DPAK) 80V 8A 60 20W
MJD45H11T4G PNP TO-252 (DPAK) 80V 8A 60 20W
MJD45H11 PNP TO-252 (DPAK) 80V 8A 60 20W
MJD45H11 PNP TO-252 (DPAK) 80V 8A 60 20W
GOODWORK ๐Ÿ“„ PDF
MJD127T4 PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 1.75W
MJD127T4G-JSM PNP TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G(MS) PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD127 PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD128T4G PNP TO-252 (DPAK) 120V 8A - 1.75W