MJD45H11 Datasheet & Equivalents

PNP TO-252 (DPAK) High Power SPTECH
VCEO
80V
Ic Max
8A
Pd Max
20W
hFE Gain
60

Quick Reference

The MJD45H11 is a PNP bipolar junction transistor in a TO-252 (DPAK) package, manufactured by SPTECH. It supports a breakdown voltage of 80V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)20WMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)40MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD45H11G PNP TO-252 (DPAK) 80V 8A 60 20W
MJD45H11T4G PNP TO-252 (DPAK) 80V 8A 60 20W
MJD45H11RLG PNP TO-252 (DPAK) 80V 8A 40 20W
MJD45H11T4 PNP TO-252 (DPAK) 80V 8A 40 20W
NJVMJD45H11RLG PNP TO-252 (DPAK) 80V 8A 40 20W
NJVMJD45H11T4G PNP TO-252 (DPAK) 80V 8A 40 20W
MJD127T4 PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 1.75W
MJD127T4G-JSM PNP TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD127T4G PNP TO-252 (DPAK) 100V 8A 1000 20W
MJD127T4G(MS) PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD127 PNP TO-252 (DPAK) 100V 8A 12000 1.5W
MJD128T4G PNP TO-252 (DPAK) 120V 8A - 1.75W