IXTL2X180N10T MOSFET Array Datasheet & Equivalents
N-Channel Array
-
High-Voltage
Littelfuse/IXYS
Vds Max
100V
Id Max
100A
Rds(on)
9mΩ@10V
Vgs(th)
4.5V
Quick Reference
The IXTL2X180N10T is a N-Channel Array in a - package, manufactured by Littelfuse/IXYS. Each channel supports a drain-source breakdown voltage of 100V and a continuous drain current of 100A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Littelfuse/IXYS | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 150W | Max thermal limit |
| On-Resistance (Rds(on)) | 9mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | 151nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ISG0616N10NM5HSCATMA1 | N-Channel Array | - | 100V | 139A | 3.4mΩ@10V 4.3mΩ@6V |
3V | Infineon 📄 PDF |
| APTM10HM05FG | N-Channel Array | - | 100V | 278A | 5mΩ@10V | 4V | MICROCHIP 📄 PDF |
| APTM10DHM05G | N-Channel Array | - | 100V | 278A | 5mΩ@10V | 4V | MICROCHIP 📄 PDF |
| APTM10HM09FT3G | N-Channel Array | - | 100V | 139A | 10mΩ@10V | 4V | MICROCHIP 📄 PDF |
| APTM20AM06SG | N-Channel Array | - | 200V | 300A | 7.2mΩ@10V | 5V | MICROCHIP 📄 PDF |
| APTM20HM08FG | N-Channel Array | - | 200V | 208A | 10mΩ@10V | 5V | MICROCHIP 📄 PDF |
| APTC60TAM21SCTPAG | N-Channel Array | - | 600V | 116A | 21mΩ@10V | 3.6V | MICROCHIP 📄 PDF |