APTM10HM05FG MOSFET Array Datasheet & Equivalents

N-Channel Array - High-Voltage MICROCHIP
Vds Max
100V
Id Max
278A
Rds(on)
5mΩ@10V
Vgs(th)
4V

Quick Reference

The APTM10HM05FG is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 100V and a continuous drain current of 278A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMICROCHIPOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)278AMax current handling
Power Dissipation (Pd)780WMax thermal limit
On-Resistance (Rds(on))5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)20nFInternal gate capacitance
Output Capacitance (Coss)8nFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
APTM10DHM05G N-Channel Array - 100V 278A 5mΩ@10V 4V
MICROCHIP 📄 PDF